(China (Mainland))
Product Summary
The M25PE10-VMN6TP is a 1 Mbit (128K x8 bit) Serial Paged Flash Memories accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The M25PE10-VMN6TP memory is organized as 2 sectors, each containing 256 pages. Each page is 256 Bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 131, 072 Bytes.
Parametrics
Absolute maximum ratings: (1)TSTG, Storage Temperature: -65 to 150 ℃; (2)TLEAD, Lead Temperature during Soldering: - see note; (3)VIO, Input and Output Voltage (with respect to Ground): -0.6 to 4.0 V;(4)VCC, Supply Voltage: -0.6 to 4.0 V;(5)VESD, Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.
Features
Features: (1)Industrial Standard SPI Pin-out; (2)1 or 2 Mbit of Page-Erasable Flash Memory; (3)Page Write (up to 256 Bytes) in 11ms (typical); (4)Page Program (up to 256 Bytes) in 1.2ms (typical); (5)Page Erase (256 Bytes) in 10ms (typical); (6)Sector Erase (512 Kbit); (7)2.7 to 3.6V Single Supply Voltage; (8)SPI Bus Compatible Serial Interface; (9)33MHz Clock Rate (maximum); (10)Deep Power-down Mode 1μA (typical); (11)Electronic Signature: JEDEC Standard Two-Byte Signature(8012h for M25PE20 8011h for M25PE10); (12)More than 100,000 Write Cycles; (13)More than 20 Year Data Retention; (14)Hardware Write Protection of the Top Sector (64KB); (15)Packages: ECOPACK (RoHS compliant).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 M25PE10-VMN6TP |
STMicroelectronics |
EEPROM SERIAL PAGE ERASE FLASH 1 Mbit Datas |
Data Sheet |
Negotiable |
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