(China (Mainland))
Product Summary
The M25PE16-VMW6TG is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The M25PE16-VMW6TG is organized as 32 sectors that are further divided up into 16 subsectors each (512 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 Bytes wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2,097,152 Bytes.
Parametrics
Absolute maximum ratings: (1)TSTG, Storage Temperature: -65 to 150 ℃;(2)TLEAD, Lead Temperature during Soldering: - see note;(3)VIO, Input and Output Voltage (with respect to Ground): -0.6 to Vcc+0.6 V;(4)VCC, Supply Voltage: -0.6 to 4.0 V;(5)VESD, Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.
Features
Features: (1)SPI bus compatible Serial interface; (2)16-Mbit Page-Erasable Flash memory; (3)Page size: 256 bytes: Page Write in 11 ms (typical); Page Program in 0.8 ms (typical); Page Erase in 10 ms (typical); (4)SubSector Erase (4 Kbytes); (5)Sector Erase (64 Kbytes); (6)Bulk Erase (16 Mbits); (7)2.7 V to 3.6 V single supply voltage; (8)50 MHz clock rate (maximum); (9)Deep Power-down mode 1 μA (typical); (10)Electronic Signature: JEDEC standard two-byte signature(8015h); (11)Software Write Protection on a 64 KByte Sector basis; (12)Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits; (13)More than 100 000 Write cycles; (14)More than 20 year data retention; (15)Packages: ECOPACK (RoHS compliant).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 M25PE16-VMW6TG |
STMicroelectronics |
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Data Sheet |
Negotiable |
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